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| SUD50N02-04P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A)a 34 28 rDS(on) (W) 0.0043 @ VGS = 10 V 0.006 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck Converter - Low-Side - Desktop, Servers, Desknote D Synchronous Rectification - POL D TO-252 Drain Connected to Tab G D S G Top View Ordering Information: SUD50N02-04P SUD50N02-04P--E3 (Lead Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Currentc Avalanche Energyc L= 0 1 mH 0.1 TA = 25_C TC = 25_C TA = 25_C TC= 25_C Symbol VDS VGS ID IDM IS IAS Eas PD TJ, Tstg Limit 20 "20 34a 50b 100 8.3a 50 125 8.3a 136 -55 to 175 Unit V A A mJ W _C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Single Pulse Document Number: 72216 S-40272--Rev. B, 23-Feb-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit _C/W C/W 1 SUD50N02-04P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 15 0.0048 50 0.0035 0.0043 0.0061 0.006 S W 20 0.8 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W VDS = 10 V, VGS = 4.5 V, ID = 50 A f = 1 MHz VGS = 0 V, VDS = 10 V, f = 1 MHz 5000 1650 770 1.6 40 14 13 20 20 50 15 30 30 75 25 ns 60 nC W p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 0.9 45 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 5 V ID - Drain Current (A) ID - Drain Current (A) 160 150 200 Transfer Characteristics 120 4V 100 80 40 3V 0 0.0 50 25_C TC = 125_C -55_C 3 4 5 6 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72216 S-40272--Rev. B, 23-Feb-04 www.vishay.com 2 SUD50N02-04P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 160 TC = -55_C RDS-on - On-Resistance (W) 0.010 On-Resistance vs. Drain Current GFS - Transconductance (S) 120 TC = 25_C TC = 125_C 0.008 0.006 80 VGS = 4.5 V VGS = 10 V 0.004 40 0.002 0 0 15 30 ID - Drain Current (A) 45 60 0.000 0 20 40 60 80 100 ID - Drain Current (A) 7000 6000 Capacitance 10 Gate Charge V GS - Gate-to-Source Voltage (V) Ciss C - Capacitance (pF) 5000 4000 3000 2000 Crss 1000 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Coss 8 VDS = 10 V ID = 50 A 6 4 2 0 0 20 40 60 80 Qg - Total Gate Charge (nC) 1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature 100 Source-Drain Diode Forward Voltage I S - Source Current (A) VGS = 10 V ID = 20 A 10 TJ = 150_C TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Document Number: 72216 S-40272--Rev. B, 23-Feb-04 www.vishay.com 3 SUD50N02-04P Vishay Siliconix THERMAL RATINGS Max Avalanche and Drain Current vs. Case Temperature 40 1000 Limited by rDS(on) Safe Operating Area 32 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 100 ms 1 ms 10 ms 100 ms 24 10 16 1 1s Single Pulse TA = 25_C 10 s 100 s dc 8 0.1 0 0 25 50 75 100 125 150 175 Tc - Case Temperature (_C) 0.0 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (sec) 0.1 www.vishay.com 4 Document Number: 72216 S-40272--Rev. B, 23-Feb-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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